Study of resistive switching processes in the titanium oxide active layer memristor

Author: Amiran Bibilashvili
Co-authors: Zurab Kushitashvili
Keywords: Oxide, memristor, low temperature
Annotation:

In this work are presented technological research results of memristors with complete and incomplete titanium oxide active layers (TiOX (x<2) and TiO2-TiOX (x<2)) received by low temperature magnetron sputtering. In the memristor structure was made electric measurement. The volt-ampheric (I-V) characterization showed hysteresis behavior which is typical for resistive switching structures.

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